Journal Publications

Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

Kim, S., Lee, B., Asheghi, M., Hurkx, F., Reifenberg, J.P., Goodson K.E., and Wong H.S.P., 2011, “Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage,” Transactions on Electron Devices, Vol. 58, pp. 584-592.